SSG4510 n & p-ch enhancement mode power mosfet n-ch: 2.5 a, 100 v, r ds(on) 112 m ? p-ch: -2.5a, -100 v, r ds(on) 180 m ? elektronische bauelemente 18-jun-2012 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 4510ss = date code rohs compliant product a suffix of -c specifies halogen & lead-free description the SSG4510 provide the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications an d suited for low voltage applications such as dc/dc c onverters. features simple drive requirement lower on-resistance fast switching performance marking package information package mpq leader size sop-8 2.5k 13 inch absolute maximum ratings parameter symbol ratings unit n-ch p-ch drain-source voltage v ds 100 -100 v gate-source voltage v gs 20 20 v continuous drain current 3 t a =25 c i d 2.5 -2.5 a t a =70 c 2 -2 a pulsed drain current 1 i dm 10 -10 a total power dissipation t a =25 c p d 2 w operating junction and storage temperature range t j , t stg -55~150 c thermal data thermal resistance junction-ambient 3 r ja 62.5 c / w sop-8 a h b m d c j k f l e n g ref. millimeter ref. m illimeter min. max. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. g g s s d d d d
SSG4510 n & p-ch enhancement mode power mosfet n-ch: 2.5 a, 100 v, r ds(on) 112 m ? p-ch: -2.5a, -100 v, r ds(on) 180 m ? elektronische bauelemente 18-jun-2012 rev. a page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. n-channel electrical characteristics (t j =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =250 a gate threshold voltage v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a forward transconductance g fs - 20 - s v ds =5v, i d =2a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current t j =25 c i dss - - 1 a v ds =80v, v gs =0 t j =55 c - - 5 static drain-source on-resistance 2 r ds(on) - - 112 m v gs =10v, i d =2a - - 120 v gs =4.5v, i d =1a total gate charge 2 q g - 26.2 - nc i d =2a v ds =80v v gs =10v gate-source charge q gs - 3.8 - gate-drain (miller) change q gd - 4.8 - turn-on delay time 2 t d(on) - 4.2 - ns v ds =50v v gs =10v i d =2a r g =3.3 r d =15 rise time t r - 7.6 - turn-off delay time t d(off) - 41 - fall time t f - 14 - input capacitance c iss - 1535 - pf v gs =0 v ds =15v f=1.0mhz output capacitance c oss - 60 - reverse transfer capacitance c rss - 37 - source-drain diode forward on voltage 2 v sd - - 1.2 v i s =1a, v gs =0 continuous source current(body diode) i s - - 2.5 a v d = v g =0, v s =1.2v pulsed source current( body diode ) 1 i sm - - 10 a notes: 1. pulse width limited by max. junction temperature . 2. pulse width Q 300us, duty cycle Q 2%. 3.surface mounted on 1 in2 copper pad of fr4 board; 135 /w when mounted on min. copper pad.
SSG4510 n & p-ch enhancement mode power mosfet n-ch: 2.5 a, 100 v, r ds(on) 112 m ? p-ch: -2.5a, -100 v, r ds(on) 180 m ? elektronische bauelemente 18-jun-2012 rev. a page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. p-channel electrical characteristics (t j =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss -100 - - v v gs =0, i d = -250 a gate threshold voltage v gs(th) -1 - -2.5 v v ds =v gs , i d = -250 a forward transconductance g fs - 7 - s v ds = -5v, i d = -2a gate-source leakage current i gss - - 100 na v gs =20v drain-source leakage current t j =25 c i dss - - -1 a v ds = -80v, v gs =0 t j =55 c - - -5 static drain-source on-resistance 2 r ds(on) - - 180 m v gs = -10v, i d = -2a - - 210 v gs = -4.5v, i d = -1a total gate charge 2 q g - 31 - nc i d = -1.5a v ds = -80v v gs = -10v gate-source charge q gs - 6.3 - gate-drain (miller) change q gd - 4.5 - turn-on delay time 2 t d(on) - 12 - ns v ds = -50v v gs = -10v i d = -1a r g =3.3 r d =15 rise time t r - 55 - turn-off delay time t d(off) - 40 - fall time t f - 40 - input capacitance c iss - 1066 - pf v gs =0 v ds = -20v f=1.0mhz output capacitance c oss - 365 - reverse transfer capacitance c rss - 55 - source-drain diode forward on voltage 2 v sd - - -1.2 v i s = -1a, v gs =0v continuous source current(body diode) i s - - -2.5 a v d = v g =0v, v s = -1.2v pulsed source current( body diode ) 1 i sm - - -10 a notes: 1. pulse width limited by max. junction temperature . 2. pulse width Q 300us, duty cycle Q 2%. 3. surface mounted on 1 in2 copper pad of fr4 board; 1 35 /w when mounted on min. copper pad.
SSG4510 n & p-ch enhancement mode power mosfet n-ch: 2.5 a, 100 v, r ds(on) 112 m ? p-ch: -2.5a, -100 v, r ds(on) 180 m ? elektronische bauelemente 18-jun-2012 rev. a page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (n-ch)
SSG4510 n & p-ch enhancement mode power mosfet n-ch: 2.5 a, 100 v, r ds(on) 112 m ? p-ch: -2.5a, -100 v, r ds(on) 180 m ? elektronische bauelemente 18-jun-2012 rev. a page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (n-ch)
SSG4510 n & p-ch enhancement mode power mosfet n-ch: 2.5 a, 100 v, r ds(on) 112 m ? p-ch: -2.5a, -100 v, r ds(on) 180 m ? elektronische bauelemente 18-jun-2012 rev. a page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (p-ch)
SSG4510 n & p-ch enhancement mode power mosfet n-ch: 2.5 a, 100 v, r ds(on) 112 m ? p-ch: -2.5a, -100 v, r ds(on) 180 m ? elektronische bauelemente 18-jun-2012 rev. a page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (p-ch)
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